Growth kinetics and thermal stress in the sublimation growth of silicon carbide Article

Ma, RH, Zhang, H, Prasad, V et al. (2002). Growth kinetics and thermal stress in the sublimation growth of silicon carbide . CRYSTAL GROWTH & DESIGN, 2(3), 10.1021/cg015572p



cited authors

  • Ma, RH; Zhang, H; Prasad, V; Dudley, M

publication date

  • 2002

published in

Digital Object Identifier (DOI)

volume

  • 2

issue

  • 3

research area