Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum Article

Verma, Ved Prakash, Kim, Do-Hyun, Jeon, Hoonha et al. (2008). Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum . THIN SOLID FILMS, 516(23), 10.1016/j.tsf.2008.06.054



International Collaboration

cited authors

  • Verma, Ved Prakash; Kim, Do-Hyun; Jeon, Hoonha; Jeon, Minhyon; Choi, Wonbong

publication date

  • October 2008

published in

author keyword

Digital Object Identifier (DOI)

volume

  • 516

issue

  • 23

research area