Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum

Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum Article

International Collaboration

cited authors

Verma, Ved Prakash; Kim, Do-Hyun; Jeon, Hoonha; Jeon, Minhyon; Choi, Wonbong

publication date

October 2008

webpage

Web of Science™

published in

THIN SOLID FILMS Journal

author keyword

Electrical measurements and properties Author Keyword
Thin film transistor Author Keyword
X-ray diffraction Author Keyword
Zinc oxide Author Keyword
Zinc oxide:metal Author Keyword

category

MATERIALS SCIENCE, COATINGS & FILMS Web of Science Category
MATERIALS SCIENCE, MULTIDISCIPLINARY Web of Science Category
PHYSICS, APPLIED Web of Science Category
PHYSICS, CONDENSED MATTER Web of Science Category

Digital Object Identifier (DOI)

https://doi.org/10.1016/j.tsf.2008.06.054

volume

516

issue

23

research area

Materials Science Web of Science Research Area
Physics Web of Science Research Area