Josephson tunnel junctions with monomolecular barriers Article

Larkins, GL, Thompson, ED, Deen, MJ. (1983). Josephson tunnel junctions with monomolecular barriers . 19(3), 980-982. 10.1109/TMAG.1983.1062370



cited authors

  • Larkins, GL; Thompson, ED; Deen, MJ

fiu authors

abstract

  • We report here the fabrication of Josephson junction tunnel diodes in which the barrier has been deposited using the Langmuir-Blodgett technique. Diodes have been fabricated using lead-indium alloys and niobium nitride for the electrodes. The barrier was vinyl stearate polymerized by Co60 γ radiation just prior to depositing the counter electrode. We have obtained critical current densities from 100–820 amps/cm2 at 4.2°K, and we have observed hysteretic behavior. Preliminary measurements of the dependence of the critical current on the applied magnetic field have also been made. © 1983 IEEE

publication date

  • January 1, 1983

Digital Object Identifier (DOI)

start page

  • 980

end page

  • 982

volume

  • 19

issue

  • 3