Improvement in fabrication processes for electronic devices of homoepitaxial diamond films Conference

Teraji, T, Wang, CL, Endo, S et al. (2001). Improvement in fabrication processes for electronic devices of homoepitaxial diamond films . 11(5), 313-324.

cited authors

  • Teraji, T; Wang, CL; Endo, S; Ito, T

fiu authors

date/time interval

  • January 23, 2001 -

publication date

  • January 1, 2001
  • January 23, 2001

keywords

  • CVD
  • ELECTRICAL-PROPERTIES
  • GROWTH
  • Materials Science
  • Materials Science, Coatings & Films
  • Materials Science, Multidisciplinary
  • SURFACE
  • Science & Technology
  • Technology
  • buffer layer
  • chemical cleaning
  • diamond
  • doping efficiency
  • exciton emission
  • high quality
  • homoepitaxial
  • hydrogen annealing
  • metal mask
  • selective growth

Location

  • OSAKA, JAPAN

Conference

  • 3rd International Symposium on Diamond Electronic Devices (ISDED-3)

start page

  • 313

end page

  • 324

volume

  • 11

issue

  • 5