Improvement in fabrication processes for electronic devices of homoepitaxial diamond films Conference

keywords

  • CVD
  • ELECTRICAL-PROPERTIES
  • GROWTH
  • Materials Science
  • Materials Science, Multidisciplinary
  • SURFACE
  • Science & Technology
  • Technology
  • buffer layer
  • chemical cleaning
  • diamond
  • doping efficiency
  • exciton emission
  • high quality
  • homoepitaxial
  • hydrogen annealing
  • metal mask
  • selective growth

Location

  • OSAKA, JAPAN

Conference

  • 3rd International Symposium on Diamond Electronic Devices (ISDED-3)

end page

  • 324

issue

  • 5