Recovery treatments for ion-induced defects in high-quality homoepitaxial CVD diamond Conference

Endo, S, Kimura, K, Irie, M et al. (2001). Recovery treatments for ion-induced defects in high-quality homoepitaxial CVD diamond . 10(3-7), 322-326. 10.1016/S0925-9635(00)00591-4

cited authors

  • Endo, S; Kimura, K; Irie, M; Wang, CL; Ito, T

fiu authors

date/time interval

  • September 3, 2000 -

publication date

  • March 1, 2001
  • September 3, 2000

keywords

  • ELECTRON-AFFINITY
  • FIB (focused ion beam)
  • FILMS
  • Materials Science
  • Materials Science, Coatings & Films
  • Materials Science, Multidisciplinary
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • QUANTUM PHOTOYIELD
  • Science & Technology
  • Technology
  • damage recovery
  • exciton emission
  • high quality diamond
  • ion implantation

Location

  • OPORTO, PORTUGAL

Digital Object Identifier (DOI)

Conference

  • 11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000)

start page

  • 322

end page

  • 326

volume

  • 10

issue

  • 3-7