Growth of (100) orientation diamond film deposited by MWPCVD methods using the gaseous mixtures of CH4, CO and H-2 Conference

Gu, CZ, Jin, ZS, Wang, CL et al. (1998). Growth of (100) orientation diamond film deposited by MWPCVD methods using the gaseous mixtures of CH4, CO and H-2 . 7(6), 765-768. 10.1016/S0925-9635(97)00299-9

International Collaboration

cited authors

  • Gu, CZ; Jin, ZS; Wang, CL; Zou, GT; Sakamoto, Y; Takaya, M

fiu authors

date/time interval

  • August 3, 1997 -

publication date

  • June 1, 1998
  • August 3, 1997

keywords

  • CHEMICAL-VAPOR-DEPOSITION
  • CO
  • Materials Science
  • Materials Science, Coatings & Films
  • Materials Science, Multidisciplinary
  • NITROGEN
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • SILICON
  • Science & Technology
  • Technology
  • diamond film
  • texture

Location

  • EDINBURGH, SCOTLAND

Digital Object Identifier (DOI)

Conference

  • Diamond 97 Conference

start page

  • 765

end page

  • 768

volume

  • 7

issue

  • 6