CZTS absorber layer in thin film p-n junction solar devices from quaternary nanoparticle precursors Conference

cited authors

  • Radu, DR; Caspar, JV; Lu, M; Johnson, LK; Cao, Y; Ionkin, AS; Malajovich, I; Rosenfeld, HD; Sun, F; Tassi, NG

fiu authors

abstract

  • Cu2ZnSnS4 (CZTS) is a rising star among inorganic semiconductor materials for thin film solar cells due to the abundance and low cost of elements in its composition. The similarity in crystal structure with CIS/CIGS affords the benefit of being able to learn from the technology previously developed by the CIS/CIGS community, specifically as it relates to device structure, characterization tools, and routes to troubleshooting. Utilization of CZTS quaternary nanoparticle precursors to generate continuous crystalline films for the absorber layer in thin film p-n junction solar devices brings certain advantages such as greater control of material composition, inexpensive solution processing, potential for smooth and densely packed films. We will discuss the fabrication of a CZTS solar device wherein the absorber layer is obtained via printing of CZTS nanoparticle inks followed by thermal treatment to render polycrystalline continuous films. Detailed characterization of materials and devices will also be presented, as will the steps in the device fabrication process.

publication date

  • August 25, 2011