Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress

cited authors

  • Paxinos, K; Antoniou, G; Afouxenidis, D; Mohamed, A; Dikko, U; Tsitsimpelis, I; Milne, WI; Nathan, A; Adamopoulos, G

fiu authors

publication date

  • January 1, 2020

start page

  • 163505

volume

  • 116

issue

  • 16