The local structure, magnetic, and transport properties of Cr-doped In 2O3 films Article

Wang, S, An, Y, Feng, D et al. (2013). The local structure, magnetic, and transport properties of Cr-doped In 2O3 films . 113(15), 10.1063/1.4800828



cited authors

  • Wang, S; An, Y; Feng, D; Wu, Z; Liu, J

fiu authors

abstract

  • Cr-doped In2O3 films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The local structure, magnetic, and transport properties of films are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, X-ray absorption fine structure, Hall effect, R-T, and magnetic measurements. Structural analysis clearly indicates that Cr ions substitute for In3 sites of the In2O3 lattice in the valence of 2 states and Cr-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. The films with low Cr concentration show a crossover from semiconducting to metallic transport behavior, whereas only semiconducting behavior is observed in high Cr concentration films. The transport property of all films is governed by Mott variable range hopping behavior, suggesting that the carriers are strongly localized. Magnetic characterizations show that the saturated magnetization of films increases first, and then decreases with Cr doping, while carrier concentration nc decreases monotonically, implying that the ferromagnetism is not directly induced by the mediated carriers. It can be concluded the ferromagnetism of films is intrinsic and originates from electrons bound in defect states associated with oxygen vacancies. © 2013 AIP Publishing LLC.

publication date

  • April 1, 2013

Digital Object Identifier (DOI)

volume

  • 113

issue

  • 15