Charge compensation in lead tungstate crystals doped with aliovalent ion Article

Zhu, WL, Feng, XQ, Kobayashi, M et al. (2002). Charge compensation in lead tungstate crystals doped with aliovalent ion . 41(10), 6089-6093. 10.1143/jjap.41.6089



cited authors

  • Zhu, WL; Feng, XQ; Kobayashi, M; Usuki, Y; Wu, ZH

fiu authors

abstract

  • We have previously reported a second dielectric relaxation ascribed to [2Repb-Oi] in Re-doped PbWO4 (Re=La, Y) after annealing at 750°C. Further investigations by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) have been performed in heterovalent-ion-doped PWO before and after annealing at 850°C. The existence of interstitial oxygen in the Re:PWO is confirmed after annealing in air at high temperature. Heavy doping with trivalent/tetravalent ion will induce interstitial oxygen ion in the scheelite PWO for charge compensation. Based on the experimental results, we construct a hypothesis to clarify the mechanism of doping at different concentrations and estimate the lead deficiency in as-grown PWO to be around tens at.ppm.

publication date

  • January 1, 2002

Digital Object Identifier (DOI)

start page

  • 6089

end page

  • 6093

volume

  • 41

issue

  • 10