Extended x-ray-absorption fine-structure study of GaAsxP1-x semiconducting random solid solutions Article

Wu, Z, Lu, K, Wang, Y et al. (1993). Extended x-ray-absorption fine-structure study of GaAsxP1-x semiconducting random solid solutions . 48(12), 8694-8700. 10.1103/PhysRevB.48.8694



cited authors

  • Wu, Z; Lu, K; Wang, Y; Dong, J; Li, H; Li, C; Fang, Z

fiu authors

abstract

  • The extended x-ray-absorption fine-structure (EXAFS) technique is employed to probe the local atomic structure of the III-V pseudobinary solid solutions GaAsxP1-x as a function of the composition. The first- and second-neighbor bond lengths as well as their variation with the composition are reported. The results imply that the local atomic structure is distorted. Both first-neighbor bond lengths and cation-cation bond lengths exhibit a bimodal structure, showing a tendency to retain the values of pure compounds. Anion-anion bond lengths are much closer to those predicted by Vegards law; however they still show a significant deviation from it. On the basis of this result, the authors propose that the atomic-scale structure of these compounds can be described by a random distribution of five special coordination tetrahedra. The relation between local atomic structure and EXAFS as well as x-ray-diffraction results is discussed. © 1993 The American Physical Society.

publication date

  • January 1, 1993

Digital Object Identifier (DOI)

start page

  • 8694

end page

  • 8700

volume

  • 48

issue

  • 12