Co doped SiC films were prepared by the RF-magnetron sputtering. The XRD, XPS, Hall and ρ-T curve measurements show that the Co doped SiC films have a 4H-SiC (100)crystal orientation and typically features of semiconductor conduction properties. We did not discover metal Co clusters and other CoSi second phase compound in the films which revealing that Co is substituted enter the SiC lattice. The Volt-Ampere characteristic testing on the films, shows that the films is a kind of nonhomogeneous doping. The magnetic properties measurement by PPMS shows the Co-doped SiC films have room temperature ferromagnetic, the saturation magnetization increase with the increasing Co content. The ferromagnetism is correspondent with the Bound Magnetic Polarons (BMP) mechanism.