Effects of growth temperature of Si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer Article

Wu, XS, Cai, HL, Tan, WS et al. (2005). Effects of growth temperature of Si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer . 29(SUPPL.), 24-27.



cited authors

  • Wu, XS; Cai, HL; Tan, WS; Zhai, ZY; Wu, ZH; Jia, QJ; Cheng, HH; Jiang, SS

fiu authors

abstract

  • This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600°C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 ± 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500°C. AFM reveals that the optimal temperature for the growth is 450°C, with a root mean squared surface roughness of 15Å.

publication date

  • December 1, 2005

start page

  • 24

end page

  • 27

volume

  • 29

issue

  • SUPPL.