High temperature transport property of copper site doped La 2CuO4 Article

Wu, Z, Xu, W, Liu, Y et al. (2011). High temperature transport property of copper site doped La 2CuO4 . 94(5), 1471-1476. 10.1111/j.1551-2916.2010.04259.x



cited authors

  • Wu, Z; Xu, W; Liu, Y; Chen, D; Lin, YH; Wu, Z; Xie, Y; Zhang, BP; Cheng, B; Nan, CW

fiu authors

abstract

  • The transport properties of p-type polycrystalline La2Cu 1-xMxO4 (MCo and Mn) have been investigated in the high temperature domain above room temperature up to 973 K. The electrical resistivity of La2Cu1-xMxO4 undergoes a temperature driven semiconducting (insulating) to metallic transition at high temperature (∼750 K) and a doping induced metal to semiconductor transition at room temperature. The Arrhenius plot of the ln(ρ/T)∼1/T shows a conducting mechanism and in the La 2Cu1-xMxO4 (M:Co and Mn) a transition temperature was found at around 750 K similar to what was observed in the La2-xRExCuO4 (RE: Pr, Nd and Y) system. We therefore suggest that in these doped ceramics the metal-insulator (semiconductor) transition at ∼750 K should be attributed to combined effects of a strong phonon scattering mechanism due to thermal activation, oxygen vacancies and structural disorders. Furthermore, a site-dependent influence of electrical resistivity in La2CuO4-based ceramics was distinguished by combining thermoelectric measurements and X-ray absorption spectroscopy. The doping induced transition is then associated with large imperfections present in the CuO2 layer, consistent with a dominant role of the single CuO2 layer in the charge transport mechanism of La2CuO4-based materials. © 2010 The American Ceramic Society.

publication date

  • May 1, 2011

Digital Object Identifier (DOI)

start page

  • 1471

end page

  • 1476

volume

  • 94

issue

  • 5