Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory Article

Qian, K, Cai, G, Nguyen, VC et al. (2016). Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory . 8(41), 27885-27891. 10.1021/acsami.6b08154

cited authors

  • Qian, K; Cai, G; Nguyen, VC; Chen, T; Lee, PS

fiu authors

abstract

  • Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>104 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

publication date

  • October 19, 2016

Digital Object Identifier (DOI)

start page

  • 27885

end page

  • 27891

volume

  • 8

issue

  • 41